The IGZ100N65H5XKSA1 is a TrenchStop™ 5 IGBT transistor manufactured by Infineon Technologies. It has a maximum power of 536W and a voltage collector emitter breakdown of 650V. The current collector is 161A, and the current collector pulsed is 400A. The switching energy is 850μJ (on) and 770μJ (off). The gate charge is 210nC, and the test condition is 400V, 50A, 8Ohm, 15V. It is a through-hole mounting type with a package/case of TO-247-4 and a supplier device package of PG-TO247-4.

• Maximum Power: 536W
• Voltage Collector Emitter Breakdown: 650V
• Current Collector: 161A
• Current Collector Pulsed: 400A
• Switching Energy (On): 850μJ
• Switching Energy (Off): 770μJ
• Gate Charge: 210nC
• Test Condition: 400V, 50A, 8Ohm, 15V
• Mounting Type: Through-hole
• Package/Case: TO-247-4
• Supplier Device Package: PG-TO247-4