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Same model may have multiple batches, images only for reference.
IGW08T120FKSA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

IGW08T120FKSA1

Part No IGW08T120FKSA1
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 1200V 16A 70W TO247-3
Datasheet
IGW08T120FKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
IGBT Type NPT, Trench Field Stop
VCEO Maximum Collector-Emitter Breakdown Voltage 1200V
Maximum Current Collector 16A
Pulsed Collector Current 24A
Collector-emitter saturation voltage(Max) 2.2V @ 15V, 8A
Maximum Power Dissipation 70W
Total Switching Energy(Ets) 1.37mJ
Input Type Standard
Gate Charge 53nC
Turn-on and Turn-off delay time 40ns/450ns
Testing Conditions 600V, 8A, 81 Ohm, 15V
Temperature Range - Operating -40°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO247-3
Win Source Part Number 1045143-IGW08T120FKSA1
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IGW08T120FKSA1 CAD Model

Description

The Infineon Technologies IGBT, NPT, Trench Field Stop is a high-performance insulated gate bipolar transistor that is ideal for various applications such as power supplies, motor drives, and renewable energy systems.

  • Model: 1045143-IGW08T120FKSA1
  • Mounting Type: Through-Hole
  • Gate Charge: 53nC
  • Maximum Collector-Emitter Breakdown Voltage: 1200V
  • Maximum Power Dissipation: 70W
  • Collector-Emitter Saturation Voltage: 2.2V @ 15V and 8A
  • Turn-On and Turn-Off Delay Time: 40ns/450ns
  • Testing Conditions: 600V, 8A, 81 Ohm, 15V
  • Package: PG-TO247-3
  • Popularity: Popular

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