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Same model may have multiple batches, images only for reference.
IGOT60R070D1AUMA3 Infineon Technologies
Same model may have multiple batches, images only for reference.

IGOT60R070D1AUMA3

Part No IGOT60R070D1AUMA3
Manufacturer Infineon Technologies
Catalog FETs - Single
Description GANFET N-CH
Datasheet
IGOT60R070D1AUMA3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Win Source Part Number WS1202360-IGOT60R070D1AUMA3
Manufacturer Infineon Technologies
Category Discrete Semiconductor Products -Transistors -FETs, MOSFETs -Single FETs, MOSFETs
Series CoolGaN™
Package Tape & Reel (TR) Cut Tape (CT)
Product Status Active
FET Type N-Channel
Technology GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 600 V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Ultra Librarian 3D Model Ultra Librarian IGOT60R070D1AUMA3 CAD Model

Description

The Infineon Technologies CoolGaN™ GaNFET (Gallium Nitride Field-Effect Transistor) is a high-performance N-Channel transistor designed for various electronic applications.

  • Manufacturer: Infineon Technologies
  • Series: CoolGaN™
  • Channel Type: N-Channel
  • Vdss: 600V
  • Operating Temperature: -55°C to 150°C
  • Package: Tape and Reel

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