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Same model may have multiple batches, images only for reference.
IDV04S60CXKSA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

IDV04S60CXKSA1

Part No IDV04S60CXKSA1
Manufacturer Infineon Technologies
Catalog Diodes, Rectifiers - Single
Description DIODE SCHOTTKY 600V 4A TO220-2FP / Diode Schottky 600V 4A 2-Pin(2+Tab) TO-220 Full-Pak
Datasheet
IDV04S60CXKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Series thinQ!
Packaging Tube
Part Status Obsolete(EOL)
Diode Type Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Maximum) 600V
Current - Average Rectified (Io) 4A (DC)
Voltage - Forward (Vf) (Maximum) @ If 1.9V @ 4A
Speed No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0ns
Current - Reverse Leakage @ Vr 50μA @ 600V
Capacitance @ Vr, F 130pF @ 1V, 1MHz
Mounting Style Through Hole
Package TO-220-2 Full Pack
Manufacturer Package PG-TO220-2 Full Pack
Operating Temperature - Junction -55°C ~ 175°C
Win Source Part Number 776666-IDV04S60CXKSA1
Popularity Medium
Supply and Demand Status Limited
Family Name IDV04S60C
Introduction Date February 04, 2010
ECCN EAR99
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian IDV04S60CXKSA1 CAD Model

Description

The Infineon Technologies IDV04S60CXKSA1 is a silicon carbide Schottky diode with a current - average rectified (Io) of 4A (DC) and a voltage - forward (Vf) (Maximum) @ If of 1.9V @ 4A.

  • Current - Average Rectified (Io): 4A (DC)
  • Voltage - Forward (Vf) (Maximum) @ If: 1.9V @ 4A
  • Maximum Rds On: 600 mOhm @ 4.6A, 10V
  • Voltage - DC Reverse (Vr) (Maximum): 600V
  • Package: TO-220-2 full pack
  • Maximum Gate-Source Voltage: ±20V
  • Operating Temperature: -55°C to 175°C
  • Obsolete: Yes
  • Packaging: Tube
  • Family: thinQ!

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