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Same model may have multiple batches, images only for reference.
IDT12S60C Real Image
Same model may have multiple batches, images only for reference.

IDT12S60C

Part No IDT12S60C
Manufacturer Infineon Technologies
Catalog Diodes, Rectifiers - Single
Description DIODE SIL CARB 600V 12A TO220-2
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Diodes - Rectifiers - Single Diodes
Mfr Infineon Technologies
Series thinQ!™
Package Bulk
Product Status Active
Technology SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) 600 V
Current - Average Rectified (Io) 12A
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 12 A
Speed No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 160 µA @ 600 V
Capacitance @ Vr, F 530pF @ 1V, 1MHz
Mounting Type Through Hole
Package / Case TO-220-2
Supplier Device Package PG-TO220-2-2
Operating Temperature - Junction -55°C ~ 175°C
Standard Package 1 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.10.0080
Win Source Part Number 601188-IDT12S60C
Ultra Librarian 3D Model Ultra Librarian IDT12S60C CAD Model

Description

The IDT12S60C is a single diode rectifier from Infineon Technologies.

  • Series: thinQ!™
  • Technology: SiC (Silicon Carbide) Schottky
  • Maximum DC Reverse Voltage (Vr): 600V
  • Average Rectified Current (Io): 12A
  • Forward Voltage (Vf): 1.7V @ 12A
  • Reverse Recovery Time (trr): 0ns
  • Operating Temperature: -55°C to 175°C
  • Package: TO-220-2
  • Suitable for: Various applications in the field of discrete semiconductor products, specifically in diodes and rectifiers

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