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Same model may have multiple batches, images only for reference.
FP200R12N3T7 Infineon Technologies – Price, Stock & Datasheet
Same model may have multiple batches, images only for reference.

FP200R12N3T7

Part No FP200R12N3T7
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 1.2kV 200A Through Hole,122x62.5mm
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Package Through Hole,122x62.5mm
Td(off) 351ns
Td(on) 203ns
Current - Collector(Ic) 200A
Collector-Emitter Breakdown Voltage (Vces) 1.2kV
Reverse Transfer Capacitance (Cres) 140pF
Input Capacitance(Cies) 40.3nF
IGBT Type FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic) [email protected]
Gate Charge(Qg) 3.34uC@600V
Operating Temperature -40℃~+175℃
Vce Saturation(VCE(sat)) 1.8V@200A,15V
Switching Energy(Eoff) 12.9mJ
Turn-On Energy (Eon) 25.1mJ
Ultra Librarian 3D Model Ultra Librarian FP200R12N3T7 CAD Model

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