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Same model may have multiple batches, images only for reference.
FF650R17IE4BOSA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

FF650R17IE4BOSA1

Part No FF650R17IE4BOSA1
Manufacturer Infineon Technologies
Catalog IGBTs - Modules
Description IGBT MODULE 1700V 4150W
Datasheet
FF650R17IE4BOSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Win Source Part Number WS1309005-FF650R17IE4BOSA1
Category Discrete Semiconductor Products> Transistors >IGBTs Modules
Manufacturer Infineon Technologies
Packaging  Tray
Part Status Active
Configuration 2 Independent
Voltage - Collector Emitter Breakdown (Max) 1700 V
Power - Max 4150 W
Vce(on) (Max) @ Vge, Ic 2.45V @ 15V, 650A
Current - Collector Cutoff (Max) 5 mA
Input Capacitance (Cies) @ Vce 54 nF @ 25 V
Ultra Librarian 3D Model Ultra Librarian FF650R17IE4BOSA1 CAD Model

Description

  • Package with CTl>400
  • High Creepage and Clearance Distances
  • High Power and Thermal Cycling Capability
  • High Power Density
  • Copper Base Plate
  • Standard Housing

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