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BSZ086P03NS3G Infineon Technologies BSZ086P03NS3G Real Image1 BSZ086P03NS3G Real Image2
Same model may have multiple batches, images only for reference.
BSZ086P03NS3G Infineon Technologies BSZ086P03NS3G Real Image1 BSZ086P03NS3G Real Image2
BSZ086P03NS3G Infineon Technologies BSZ086P03NS3G Real Image1 BSZ086P03NS3G Real Image2
Same model may have multiple batches, images only for reference.

BSZ086P03NS3G

Part No BSZ086P03NS3G
Manufacturer Infineon Technologies
Catalog FETs - Single
Description OptiMOS P3 Power-Transistor / Trans MOSFET P-CH 30V 13.5A 8-Pin TSDSON EP T/R
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products
Family FETs - Single
Manufacturer Infineon Technologies
Win Source Part Number 237445-BSZ086P03NS3G
Popularity Medium
Supply and Demand Status Limited
Family Name BSZ086P03NS3
Introduction Date March 16, 2009
ECCN EAR99
Country of Origin Malaysia
Halogen Free Compliant
Estimated EOL Date 2029
Ultra Librarian 3D Model Ultra Librarian BSZ086P03NS3G CAD Model

Description

BSZ086P03NS3G

The BSZ086P03NS3G is a P-channel MOSFET renowned for its low power loss and high-speed operation. It is specially designed for applications requiring high efficiency and performance in adverse environments.

  • Applications: Battery-powered applications, Load switch applications, Portable devices
  • Features and Benefits: Low gate charge, High current capability, Reverse battery protection
  • Additional Details:
    • RDS(on): 8.6 mΩ
    • VGS(th): -1.3V to -2.1V
    • Package: PG-TSDSON-8

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $1.7594 $52.7820
70+ $1.4437 $101.0590
110+ $1.3985 $153.8350
150+ $1.3534 $203.0100
195+ $1.3083 $255.1185
260+ $1.1730 $304.9800
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 20,000 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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