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BSZ050N03LS G

Part No BSZ050N03LS G
Manufacturer Infineon Technologies
Catalog Hard To Find
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Reference Date Code 0712+
Reference case QFN
Manufacturer Infineon Technologies
Manufacturer Homepage www.infineon.com
Win Source Part Number 713831-BSZ050N03LS G
Popularity Low
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian BSZ050N03LS G CAD Model

Description

The BSZ050N03LS G is an OptiMOS™ power MOSFET from Infineon Technologies. It is designed for high-efficiency power conversion applications, offering very low on-state resistance (RDS(on)) and high current capability. This MOSFET is commonly used in synchronous rectification, DC-DC converters, and motor control applications.

Applications:

  • Synchronous Rectification: Used in synchronous rectifiers to improve efficiency in power supplies.
  • DC-DC Converters: Implemented in DC-DC converters for efficient voltage regulation.
  • Motor Control: Utilized in motor control circuits for efficient motor drive.
  • Battery Management Systems (BMS): Employed in BMS for battery charging and discharging control.
  • Load Switching: Used as a load switch for efficient power distribution.

Features:

  • OptiMOS™ Technology: Utilizes Infineon's OptiMOS™ technology for high efficiency and low RDS(on).
  • Low On-State Resistance (RDS(on)): Minimizes power loss and improves efficiency.
  • High Current Capability: Capable of handling high current levels.
  • Logic Level Gate Drive: Allows direct drive from logic circuits.
  • Avalanche Rated: Withstands avalanche breakdown without damage.

Benefits:

  • Improved Efficiency: Low RDS(on) reduces power dissipation and improves efficiency.
  • High Power Density: Enables high power density in power conversion systems.
  • Simplified Gate Drive: Logic level gate drive simplifies drive circuit design.
  • Robust Performance: Avalanche rating ensures robust performance in demanding applications.
  • Reduced System Size: High power density allows for smaller system size.

Additional Details:

The BSZ050N03LS G features a very low on-state resistance, typically in the milliohm range, which minimizes conduction losses. It supports a gate-source voltage range suitable for logic level drive, simplifying the gate drive circuitry. The MOSFET can handle high drain current levels and is avalanche rated for added robustness. Its operating temperature range and thermal resistance are specified in the product datasheet. Detailed specifications, including RDS(on) vs. gate-source voltage characteristics, thermal impedance, and maximum ratings, can be found in the product datasheet provided by Infineon Technologies.

The BSZ050N03LS G's characteristics make it a suitable choice for high-efficiency power conversion systems requiring low losses and high current capability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.8181 $53.1765
150+ $0.6713 $100.6950
235+ $0.6503 $152.8205
320+ $0.6294 $201.4080
415+ $0.6084 $252.4860
555+ $0.5454 $302.6970
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 100,000 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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