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Same model may have multiple batches, images only for reference.
BSM10GD120DN2E3224BOSA1
Same model may have multiple batches, images only for reference.

BSM10GD120DN2E3224BOSA1

Part No BSM10GD120DN2E3224BOSA1
Manufacturer Infineon Technologies
Catalog IGBTs - Modules
Description IGBT MODULE 1200V 15A 80W
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - IGBTs - IGBT Modules
Mfr Infineon Technologies
Package Tray
Product Status Last Time Buy
Configuration Full Bridge
Voltage - Collector Emitter Breakdown (Max) 1200 V
Current - Collector (Ic) (Max) 15 A
Power - Max 80 W
Vce(on) (Max) @ Vge, Ic 3.2V @ 15V, 10A
Current - Collector Cutoff (Max) 400 µA
Input Capacitance (Cies) @ Vce 530 pF @ 25 V
Input Standard
NTC Thermistor No
Temperature Range - Operating 150°C (TJ)
Mounting Type Chassis Mount
Package / Case Module
Supplier Device Package Module
Base Product Number BSM10G
Standard Package 10 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 846861-BSM10GD120DN2E3224BOSA1
Ultra Librarian 3D Model Ultra Librarian BSM10GD120DN2E3224BOSA1 CAD Model

Description

The BSM10GD120DN2E3224BOSA1 is an IGBT module from Infineon Technologies.

  • Category: Discrete Semiconductor Products - IGBTs
  • Configuration: Full Bridge
  • Collector-Emitter Breakdown Voltage: 1200V
  • Collector Current (Ic): 15A
  • Collector-Emitter Saturation Voltage (Vce(on)): 3.2V @ 15V, 10A
  • Mounting Type: Chassis Mount
  • Package: Module
  • Operating Temperature: Up to 150°C
  • Product Status: Last Time Buy

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