The 2SK1476 is an N-Channel enhancement mode power MOSFET manufactured by Inchange Semiconductor. It is designed for high-voltage, high-speed switching applications. The device features a robust design, contributing to enhanced reliability in demanding circuit environments.

Applications

• High-efficiency switch-mode power supplies (SMPS)
• Uninterruptible power supplies (UPS)
• DC-DC converters
• Motor control circuits
• Power inverters

Features

• N-Channel Enhancement Mode MOSFET
• High Voltage Capability
• Low Gate Charge
• Fast Switching Speed
• Robust Avalanche Characteristics

Benefits

• Enables high-efficiency power conversion due to low on-resistance and gate charge.
• Suitable for high-voltage applications, providing design flexibility.
• Reduces switching losses with fast switching speed, improving overall efficiency.
• Offers enhanced reliability under transient conditions due to robust avalanche characteristics.
• Simplified gate drive requirements due to enhancement mode operation.

Technical Specifications

Typical technical specifications include:

• Drain-Source Voltage (VDSS): 900V
• Gate-Source Voltage (VGSS): ±30V
• Continuous Drain Current (ID): 3A
• Pulsed Drain Current (IDM): 9A
• Gate Charge (Qg): 8.5nC
• Turn-on Delay Time: 8ns
• Turn-off Delay Time: 15ns
• RDS(on) @ VGS=10V: 4.5Ω

The 2SK1476 is typically available in a TO-220 package. Refer to the manufacturer's datasheet for detailed specifications, application notes, and safe operating area information.