The 2SC4296 is a silicon NPN epitaxial planar transistor manufactured by Inchange Semiconductor Company Limited. This transistor is designed for low noise amplifier applications in VHF band. It offers excellent gain characteristics and low noise figure, making it suitable for front-end amplification in radio receivers and other communication devices.

Applications

• VHF Low Noise Amplifiers: Used as the first stage amplifier in VHF receivers to amplify weak signals.
• Radio Receivers: Found in FM and VHF radio receivers to improve sensitivity.
• TV Tuners: Used in television tuners for VHF signal amplification.
• Wireless Communication Devices: Employed in cordless phones and other wireless communication systems.
• Instrumentation: Utilized in sensitive measurement equipment requiring low noise amplification.

Features

• NPN Silicon Epitaxial Planar Transistor: Provides reliable performance.
• Low Noise Figure: Minimizes unwanted noise amplification.
• High Gain: Amplifies signals effectively.
• High Transition Frequency (fT): Enables operation at VHF frequencies.
• Small Signal Amplifier: Optimized for small signal amplification.

Benefits

• Improved Sensitivity: Low noise figure enhances the ability to detect weak signals.
• Enhanced Signal Quality: High gain provides strong and clear signal amplification.
• Reliable Communication: Reduces signal degradation and improves overall communication quality.
• Versatile Use: Suitable for various VHF applications.
• Stable Operation: Consistent performance in demanding environments.

Specifications

The 2SC4296 typically features the following electrical characteristics:

• Collector-Emitter Voltage (Vceo): Around 20 V.
• Collector Current (Ic): Approximately 25 mA.
• Transition Frequency (fT): Typically 1.2 GHz.
• Noise Figure (NF): Typically 1.5 dB at 200 MHz.

Note: Please refer to the official datasheet from Inchange Semiconductor Company Limited for the most accurate and detailed specifications for the 2SC4296 transistor.