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2SC1970

Part No 2SC1970
Manufacturer Inchange Semiconductor Company Limited
Catalog Hard To Find
Description isc Silicon NPN Power Transistor
Sample
Rohs State rohs
ECAD Module
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Manufacturer Inchange Semiconductor Company Limited
Win Source Part Number 1125164-2SC1970
Manufacturer Homepage www.iscsemi.cn
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian 2SC1970 CAD Model

Description

The 2SC1970 is an NPN silicon RF power transistor manufactured by Inchange Semiconductor Company Limited. It is specifically designed for high-frequency power amplification in the VHF and UHF bands.

Applications:

  • VHF/UHF Amplifiers: Primarily used in VHF (Very High Frequency) and UHF (Ultra High Frequency) amplifiers.
  • Mobile Radio Transmitters: Employed in the output stages of mobile radio transmitters to boost signal power.
  • Ham Radio Equipment: Utilized in amateur radio transmitters and receivers for signal amplification.
  • RF Communication Systems: Integrated into various RF communication systems requiring power amplification.

Features:

  • High Power Gain: Provides a high power gain for efficient signal amplification.
  • High Collector-Emitter Voltage (Vceo): Rated for high collector-emitter voltages to ensure reliable operation.
  • Low Feedback Capacitance: Minimizes feedback capacitance, which helps to improve stability at high frequencies.
  • Gold Metallization: Features gold metallization for improved reliability and resistance to electromigration.

Benefits:

  • Increased Signal Strength: Amplifies weak signals to increase signal strength in RF communication systems.
  • Enhanced Communication Range: Extends the communication range of radio transmitters and receivers.
  • Stable Operation: Designed for stable operation at high frequencies, minimizing the risk of oscillations.
  • Improved Reliability: Gold metallization enhances the long-term reliability of the transistor.

Technical Specifications:

  • Collector-Base Voltage (VCBO): 60V
  • Collector-Emitter Voltage (VCEO): 30V
  • Emitter-Base Voltage (VEBO): 3V
  • Collector Current (IC): 1A
  • Collector Dissipation (PC): 6W
  • Transition Frequency (fT): 250 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C

The 2SC1970 is typically supplied in a TO-220 package, which provides good thermal conductivity for efficient heat dissipation.

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