The 2SB1171A is a PNP silicon epitaxial transistor manufactured by Inchange Semiconductor Company Limited. It is designed for use in low-frequency power amplifier applications and switching circuits. This transistor is characterized by its high collector current and low saturation voltage.

Applications

• Low-frequency power amplifiers
• Switching circuits
• DC-DC converters
• Motor control circuits
• General-purpose amplification

Features

• High collector current (IC = -7A)
• Low saturation voltage (VCE(sat) = -0.5V max)
• High power dissipation (PC = 30W)
• High hFE
• Complementary to 2SD1764A

Benefits

• Provides high output power in amplifier circuits.
• Efficient switching performance due to low saturation voltage.
• Suitable for high-current applications.
• Easy to use in complementary push-pull configurations.
• Reliable performance in a variety of circuits.

Additional Details

The 2SB1171A transistor is typically supplied in a TO-220 package. It has a collector-emitter voltage (VCEO) of -60V, a collector-base voltage (VCBO) of -60V, and an emitter-base voltage (VEBO) of -5V. The DC current gain (hFE) typically ranges from 80 to 240. The operating and storage junction temperature range is -55°C to +150°C. The transistor is designed for through-hole mounting. This component is often used in audio amplifier stages and power supply circuits where a reliable and efficient PNP transistor is needed.