The H5TQ4G43MMR-H9C is a 4Gb DDR3 SDRAM (Synchronous Dynamic Random-Access Memory) component manufactured by Hynix Semiconductor. This memory chip is designed for high-performance applications requiring significant memory capacity and fast data transfer rates. Organized as 256M x 16.

Applications

• Desktop and Laptop Computers
• Graphics Cards
• Gaming Consoles
• Networking Equipment
• High-Performance Embedded Systems

Features

• Capacity: 4Gb (256M x 16)
• Interface: DDR3 SDRAM
• Operating Voltage: 1.5V (Typical)
• Speed Grade: H9C (Specific speed bin, dictating maximum clock frequency and data rate)
• Data Rate: Supports data transfer rates up to DDR3-1600 (PC3-12800) depending on the speed grade.
• Clock Frequency: Operates at a clock frequency defined by the speed grade.
• Package: FBGA (Fine-Pitch Ball Grid Array)
• RoHS Compliance: Lead-free and compliant with RoHS environmental regulations.
• Power-Saving Modes: Deep Power-Down mode and other power-saving features.
• Double Data Rate: Transfers data on both the rising and falling edges of the clock signal.

Benefits

• High Capacity: 4Gb capacity suitable for applications requiring large memory space.
• High Bandwidth: DDR3 technology provides improved bandwidth compared to older memory standards.
• Low Power Consumption: Operates at 1.5V, contributing to reduced power consumption.
• Enhanced Performance: Fast data transfer rates enhance overall system performance.
• Cost-Effective Solution: Offers a balance between performance and cost.
• Wide Availability: DDR3 memory is readily available and widely supported.
• Reliable Operation: Designed for stable and reliable performance.

Additional Details

The 'H9C' speed grade indicates the performance characteristics of this particular chip. Refer to the Hynix datasheet for precise timing specifications and operating parameters associated with the H9C speed bin. The FBGA package enables high-density mounting and efficient heat dissipation. This part is often incorporated into memory modules for expanding system memory capacity. DDR3 architecture utilizes a prefetch mechanism to boost data throughput.