The H5TC4G43MFR-PBA is a 4Gb DDR3 SDRAM chip manufactured by Hynix Semiconductor. It is designed for use in applications requiring high bandwidth and moderate power consumption.

Applications:

• Mobile devices (smartphones, tablets)
• Embedded systems
• Networking equipment
• Consumer electronics (e.g., digital TVs, set-top boxes)
• Graphics cards (low-end)

Features:

• 4Gb (512M x 8) capacity
• DDR3 SDRAM technology
• Data rates up to 1600 Mbps
• Single 1.5V power supply
• 8 Internal banks
• RoHS compliant

Benefits:

• High bandwidth for fast data transfer
• Low power consumption
• Compact size
• Reliable performance

Additional Details:

The H5TC4G43MFR-PBA functions as a Double Data Rate 3 (DDR3) Synchronous DRAM, transferring data on both clock signal edges. This doubles the data transfer rate compared to Single Data Rate (SDR) SDRAM. Operating with a single 1.5V power supply contributes to reduced power consumption. Its internal bank architecture enhances system performance. Hynix Semiconductor ensures its quality.

This part is frequently employed in applications prioritizing efficient memory operations and a decent storage size, such as mobile devices or embedded systems needing quick data access without necessitating exceptionally large memory volumes.