The 2SC1345 is a silicon NPN epitaxial planar transistor manufactured by Hitachi, Ltd. It is designed for low-noise amplifier applications.

Applications:

• Low-noise preamplifiers
• Microphone amplifiers
• General-purpose amplification
• Audio circuits

Features:

• Low noise figure: Typically 1dB at 1kHz
• High current gain (hFE): Ranging from 200 to 700, available in different grades (O, Y, GR)
• Low collector-emitter saturation voltage
• High transition frequency (fT) for good high-frequency performance
• Epitaxial planar structure for reliability

Benefits:

• Improved signal-to-noise ratio in sensitive amplifier circuits
• Enhanced audio quality due to low noise characteristics
• Versatile application due to high gain and frequency response
• Stable and reliable performance due to its robust construction
• Ease of integration into various electronic designs

Technical Specifications:

Polarity: NPN

Material: Silicon (Si)

Collector-Emitter Voltage (VCEO): 60V

Collector-Base Voltage (VCBO): 60V

Emitter-Base Voltage (VEBO): 5V

Collector Current (IC): 0.1A

Collector Dissipation (PC): 0.25W

Transition Frequency (fT): 180 MHz (Typical)

Operating Temperature Range: -55°C to +150°C