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2SB718

Part No 2SB718
Manufacturer Hitachi, Ltd
Catalog Hard To Find
Description LOW FREQUENCY HIGH VOLTAGE AMPLIFIER Complementary pair with 2SB757 and 2SB758
Sample
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Manufacturer Hitachi, Ltd
Win Source Part Number 1124995-2SB718
Manufacturer Homepage www.renesas.com/eng
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian 2SB718 CAD Model

Description

The 2SB718 is a PNP silicon epitaxial transistor manufactured by Hitachi. It is designed for use in audio frequency power amplifier and switching applications. This transistor is known for its good linearity, high collector current capability, and relatively high power dissipation, making it suitable for driving medium to high power loads in audio equipment and power supplies.

Applications

  • Audio power amplifiers (output stage)
  • Switching regulators
  • DC-DC converters
  • Motor control circuits
  • General-purpose switching and amplification

Features

  • PNP silicon epitaxial transistor
  • High collector current (IC = -3A)
  • Low saturation voltage (VCE(sat) = -0.5V max at IC = -2A)
  • High power dissipation (PC = 30W)
  • High current gain (hFE)

Benefits

  • High Power Output: Capable of delivering significant power, making it suitable for the output stages of audio amplifiers.
  • Efficient Switching: Low saturation voltage ensures efficient switching performance, reducing power loss in switching applications.
  • Good Linearity: Provides good linearity in amplification, minimizing signal distortion.
  • Reliable Performance: High power dissipation capability ensures reliable operation under high load conditions.
  • Versatile Applications: Suitable for a wide range of applications, including amplification and switching.

Additional Details

The 2SB718 is typically packaged in a TO-220 package, allowing for effective heat dissipation. Key electrical characteristics include a collector-base voltage (VCBO) of -80V, a collector-emitter voltage (VCEO) of -80V, and an emitter-base voltage (VEBO) of -5V. The collector current (IC) is rated at -3A, and the collector power dissipation (PC) is 30W. Its operating temperature range is typically from -55°C to +150°C. Proper heat sinking is crucial when operating the transistor at or near its maximum power dissipation rating to prevent overheating and device failure.

Due to its high power dissipation and current handling capabilities, the 2SB718 is often used in the output stages of audio amplifiers driving loudspeakers. Its low saturation voltage also makes it suitable for use in switching regulators, where efficiency is critical. Overall, the 2SB718 is a robust and versatile PNP transistor well-suited for high-power applications requiring both amplification and switching capabilities.

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