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RFP2N15

Name: RFP2N15
Brand: Harris Corporation
SKU: 1119268
Availability: InStock
Rating: 4.85 (5 reviews)

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Part No	RFP2N15
Manufacturer	Harris Corporation
Catalog	Transistors - FETs, MOSFETs - RF
Description	N-CHANNEL, MOSFET / N-Channel 150 V 2A (Tc) 25W (Tc) Through Hole TO-220-3
Sample
Rohs State	Need to verify
ECAD Module
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Category	Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr	Harris Corporation
Package	Bulk
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	150 V
Current - Continuous Drain (Id) @ 25°C	2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	1.75Ohm @ 2A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	200 pF @ 25 V
Power Dissipation (Max)	25W (Tc)
Temperature Range - Operating	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220-3
Package / Case	TO-220-3
RoHS Status	RoHS non-compliant
MSL Level	1 (Unlimited)
REACH Status	Vendor Undefined
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	HARHARRFP2N15,2156-RFP2N15
Standard Package	1
Win Source Part Number	1119268-RFP2N15
Ultra Librarian 3D Model	Ultra Librarian RFP2N15 CAD Model

Alternative Products

Description

The RFP2N15 is a N-Channel MOSFET transistor from Harris Corporation. It is designed for use in Discrete Semiconductor Products, specifically Transistors - FETs, MOSFETs - Single.

Drain to Source Voltage (Vdss): 150 V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 1.75Ohm @ 2A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation: 25W (Tc)
Mounting Type: Through Hole
Package / Case: TO-220-3
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
Vgs (Max): ±20V
Temperature Range: -55°C ~ 150°C (TJ)
ECCN: EAR99
RoHS: non-compliant

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