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Same model may have multiple batches, images only for reference.
HGTD8P50G1 Intersil Corporation
Same model may have multiple batches, images only for reference.

HGTD8P50G1

Part No HGTD8P50G1
Manufacturer Harris Corporation
Catalog IGBTs - Single
Description 8A, 500V P-CHANNEL IGBT
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Mfr Harris Corporation
Package Bulk
Product Status Active
Voltage - Collector Emitter Breakdown (Max) 500 V
Current - Collector (Ic) (Max) 12 A
Current - Collector Pulsed (Icm) 18 A
Vce(on) (Max) @ Vge, Ic 3.7V @ 15V, 8A
Power - Max 66 W
Input Type Standard
Gate Charge 30 nC
Temperature Range - Operating -40°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package I-PAK
Standard Package 212 pcs
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 597663-HGTD8P50G1
Ultra Librarian 3D Model Ultra Librarian HGTD8P50G1 CAD Model

Description

The 597663-HGTD8P50G1 is a single IGBT (Insulated Gate Bipolar Transistor) designed for high-power applications.

  • Product Name: 597663-HGTD8P50G1
  • Type: single IGBT (Insulated Gate Bipolar Transistor)
  • Application: high-power applications
  • Power Rating: 66W
  • Collector-Emitter Breakdown Voltage: 500V
  • Features: low collector current and collector-emitter saturation voltage, ensuring efficient power switching.
  • Package: through-hole TO-251-3 Short Leads package
  • Mounting: easy mounting on circuit boards.
  • Product Status: active product
  • Performance: reliable performance for IGBT applications.

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