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Same model may have multiple batches, images only for reference.
MURT10020 Real Image
Same model may have multiple batches, images only for reference.

MURT10020

Part No MURT10020
Manufacturer GeneSiC Semiconductor
Catalog Diodes, Rectifiers - Arrays
Description DIODE ARRAY GP 200V 100A 3TOWER
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer GeneSiC Semiconductor
Packaging Bulk
Status Active
Diode Type Standard
Voltage - DC Reverse (Vr) (Max) 200V
Current - Average Rectified (Io) (per Diode) 100A (DC)
Voltage - Forward (Vf) (Max) @ If 1.3V @ 50A
Speed(Frequency) Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr) 75ns
Current - Reverse Leakage @ Vr 25μA @ 50V
Operating Temperature - Junction -40°C to 175°C
Mounting Chassis Mount
Case / Package Three Tower
Win Source Part Number 141358-MURT10020
Popularity Medium
Supply and Demand Status Limited
Quantity per package 25
Ultra Librarian 3D Model Ultra Librarian MURT10020 CAD Model

Description

The GeneSiC Semiconductor MURT10020 is a standard diode with a voltage forward of 1.3V @ 50A and a current reverse leakage of 25μA @ 50V.

  • Voltage Forward: 1.3V @ 50A
  • Current Reverse Leakage: 25μA @ 50V
  • Peak Reverse Voltage: 200V
  • Average Rectified Current: 100A (DC)
  • Package: Three Tower
  • Operating Temperature Range: -40°C to 175°C
  • Recovery Speed: 200mA (Io)

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