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Same model may have multiple batches, images only for reference.
MBR35100
Same model may have multiple batches, images only for reference.

MBR35100

Part No MBR35100
Manufacturer GeneSiC Semiconductor
Catalog Diodes, Rectifiers - Single
Description DIODE SCHOTTKY 100V 35A DO4 / Diode Schottky 100 V 35A Chassis, Stud Mount DO-4
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Diodes - Rectifiers - Single
Mfr GeneSiC Semiconductor
Package Bulk
Diode Type Schottky
Voltage - DC Reverse (Vr) (Max) 100 V
Current - Average Rectified (Io) 35A
Voltage - Forward (Vf) (Max) @ If 840 mV @ 35 A
Speed Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr 1.5 mA @ 20 V
Mounting Type Chassis, Stud Mount
Package / Case DO-203AA, DO-4, Stud
Supplier Device Package DO-4
Operating Temperature - Junction -55°C ~ 150°C
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.10.0080
Other Names MBR35100GN
Standard Package 250
Win Source Part Number 1076480-MBR35100
Ultra Librarian 3D Model Ultra Librarian MBR35100 CAD Model

Description

The GeneSiC Semiconductor MBR35100 Schottky diode from GeneSiC Semiconductor is a fast recovery diode with a maximum DC reverse voltage of 100 V and an average rectified current of 35 A.

  • Maximum DC Reverse Voltage: 100 V
  • Average Rectified Current: 35 A
  • Forward Voltage: 840 mV @ 35 A
  • Reverse Leakage Current: 1.5 mA @ 20 V
  • Package: DO-203AA, DO-4, Stud
  • Temperature Range: -55°C to 150°C

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