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Same model may have multiple batches, images only for reference.
GB05SLT12-220GeneSiC Semiconductor
Same model may have multiple batches, images only for reference.

GB05SLT12-220

Part No GB05SLT12-220
Manufacturer GeneSiC Semiconductor
Catalog Diodes, Rectifiers - Single
Description DIODE SIL CARB 1.2KV 5A TO220-2
Datasheet
GB05SLT12-220 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Win Source Part Number Cross
Manufacturer GeneSiC Semiconductor
Category Discrete Semiconductor Products Diodes Rectifiers Single Diodes
Packaging  Bulk
Part Status Obsolete
Voltage - DC Reverse (Vr) (Max) 1200 V
Technology SiC (Silicon Carbide) Schottky
Voltage - Forward (Vf) (Max) @ If 1.8 V @ 2 A
Speed No Recovery Time > 500mA (Io)
Current - Reverse Leakage @ Vr 50 µA @ 1200 V
Capacitance @ Vr, F 260pF @ 1V, 1MHz
Win Source Part Number WS1305558-GB05SLT12-220
Ultra Librarian 3D Model Ultra Librarian GB05SLT12-220 CAD Model

Description

Features
● 1200 V Schottky rectifier
● 175 °C maximum operating temperature
● Temperature independent switching behavior
● Superior surge current capability
● Positive temperature coefficient of VF
● Extremely fast switching speeds
● Superior figure of merit QC/IF

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