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2SD1118

Part No 2SD1118
Manufacturer Fuji Electric
Catalog Hard To Find
Description TRIPLE DIFFUSED PLANER TYPE HIGH SPEED SWITCHING
Sample
Rohs State rohs
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Manufacturer Fuji Electric
Win Source Part Number 1126136-2SD1118
Manufacturer Homepage www.fujielectric.co.jp/eng/fdt/scd
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian 2SD1118 CAD Model

Description

The 2SD1118 is a silicon NPN triple diffused planar transistor from Fuji Electric, primarily designed for switching regulator and high-speed switching applications. It features a high breakdown voltage and fast switching speed.

Applications:

  • Switching Regulators
  • High-Speed Switching Circuits
  • DC-DC Converters
  • Motor Control Circuits

Features:

  • High Breakdown Voltage: VCEO = 400V, enabling use in high-voltage applications.
  • Fast Switching Speed: Reduces switching losses in high-frequency applications.
  • Low Saturation Voltage: Minimizes power dissipation and improves efficiency.
  • High Collector Current: IC = 5A, suitable for moderate power applications.
  • Triple Diffused Planar Structure: Provides reliable performance and consistent characteristics.

Benefits:

  • Improved Efficiency: Fast switching speed and low saturation voltage contribute to higher efficiency in switching circuits.
  • Reliable Operation: The triple diffused planar structure ensures stable and reliable performance.
  • Reduced Power Loss: Low saturation voltage minimizes power dissipation, leading to cooler operation.
  • Versatile Usage: Suitable for a variety of switching applications, including power supplies and motor control.

Technical Specifications (Typical):

  • Collector-Emitter Voltage (VCEO): 400V
  • Collector-Base Voltage (VCBO): 600V
  • Emitter-Base Voltage (VEBO): 7V
  • Collector Current (IC): 5A
  • Peak Collector Current (ICM): 10A
  • Collector Dissipation (PC): 40W
  • Storage Temperature: -55 to +150°C

The 2SD1118 is typically available in a TO-220 package.

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