The 2SD1118 is a silicon NPN triple diffused planar transistor from Fuji Electric, primarily designed for switching regulator and high-speed switching applications. It features a high breakdown voltage and fast switching speed.
Applications:
- Switching Regulators
- High-Speed Switching Circuits
- DC-DC Converters
- Motor Control Circuits
Features:
- High Breakdown Voltage: VCEO = 400V, enabling use in high-voltage applications.
- Fast Switching Speed: Reduces switching losses in high-frequency applications.
- Low Saturation Voltage: Minimizes power dissipation and improves efficiency.
- High Collector Current: IC = 5A, suitable for moderate power applications.
- Triple Diffused Planar Structure: Provides reliable performance and consistent characteristics.
Benefits:
- Improved Efficiency: Fast switching speed and low saturation voltage contribute to higher efficiency in switching circuits.
- Reliable Operation: The triple diffused planar structure ensures stable and reliable performance.
- Reduced Power Loss: Low saturation voltage minimizes power dissipation, leading to cooler operation.
- Versatile Usage: Suitable for a variety of switching applications, including power supplies and motor control.
Technical Specifications (Typical):
- Collector-Emitter Voltage (VCEO): 400V
- Collector-Base Voltage (VCBO): 600V
- Emitter-Base Voltage (VEBO): 7V
- Collector Current (IC): 5A
- Peak Collector Current (ICM): 10A
- Collector Dissipation (PC): 40W
- Storage Temperature: -55 to +150°C
The 2SD1118 is typically available in a TO-220 package.