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Same model may have multiple batches, images only for reference.
SGS23N60UFDTU Real Image
Same model may have multiple batches, images only for reference.

SGS23N60UFDTU

Part No SGS23N60UFDTU
Manufacturer Fairchild/ON Semiconductor
Catalog IGBTs - Single
Description IGBT 600V 23A 73W TO220F
Datasheet
SGS23N60UFDTU Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Not For New Designs
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 23A
Pulsed Collector Current 92A
Collector-emitter saturation voltage(Max) 2.6V @ 15V, 12A
Maximum Power Dissipation 73W
Total Switching Energy(Ets) 115μJ (on), 135μJ (off)
Input Type Standard
Gate Charge 49nC
Turn-on and Turn-off delay time 17ns/60ns
Testing Conditions 300V, 12A, 23 Ohm, 15V
Reverse Recovery Time (trr) 60ns
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220F
Win Source Part Number 064365-SGS23N60UFDTU
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SGS23N60UFDTU CAD Model

Description

The Fairchild/ON Semiconductor 064365-SGS23N60UFDTU is a high-performance IGBT transistor designed for use in power electronics applications.

  • Maximum Collector-Emitter Breakdown Voltage: 600V
  • Maximum Collector Current: 23A
  • Reverse Recovery Time: 60ns
  • Gate Charge: 49nC
  • Package: TO-220F
  • Temperature Range: -55°C to 150°C (TJ)
  • Popularity: medium
  • Supply and Demand Status: limited

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