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Same model may have multiple batches, images only for reference.
SGP13N60UFTU Real Image
Same model may have multiple batches, images only for reference.

SGP13N60UFTU

Part No SGP13N60UFTU
Manufacturer Fairchild/ON Semiconductor
Catalog IGBTs - Single
Description IGBT 600V 13A 60W TO220
Datasheet
SGP13N60UFTU Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 13A
Pulsed Collector Current 52A
Collector-emitter saturation voltage(Max) 2.6V @ 15V, 6.5A
Maximum Power Dissipation 60W
Total Switching Energy(Ets) 85μJ (on), 95μJ (off)
Input Type Standard
Gate Charge 25nC
Turn-on and Turn-off delay time 20ns/70ns
Testing Conditions 300V, 6.5A, 50 Ohm, 15V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220-3
Win Source Part Number 1095612-SGP13N60UFTU
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SGP13N60UFTU CAD Model

Description

The Fairchild/ON Semiconductor SGP13N60UFTU is an IGBT type through-hole mounting device with a maximum collector current of 13A and a maximum collector-emitter breakdown voltage of 600V. Fairchild/ON Semiconductor SGP13N60UFTU

  • Mounting Type: through-hole
  • Maximum Collector Current: 13A
  • Maximum Collector-Emitter Breakdown Voltage: 600V
  • Gate Charge: 25nC
  • Maximum Power Dissipation: 60W
  • Pulsed Collector Current: 52A
  • Collector-Emitter Saturation Voltage (Max): 2.6V @ 15V, 6.5A
  • Total Switching Energy (Ets): 85μJ (on), 95μJ (off)
  • Turn-On Delay Time: 20ns
  • Turn-Off Delay Time: 70ns
  • Category: Discrete Semiconductor Products
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Package: TO-220-3
  • Supply and Demand Status: balanced

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