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Same model may have multiple batches, images only for reference.
SGM2N60UFTF Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

SGM2N60UFTF

Part No SGM2N60UFTF
Manufacturer Fairchild/ON Semiconductor
Catalog IGBTs - Single
Description IGBT 600V 2.4A 2.1W SOT-223
Datasheet
SGM2N60UFTF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 2.4A
Pulsed Collector Current 10A
Collector-emitter saturation voltage(Max) 2.6V @ 15V, 1.2A
Maximum Power Dissipation 2.1W
Total Switching Energy(Ets) 30μJ (on), 13μJ (off)
Input Type Standard
Gate Charge 9nC
Turn-on and Turn-off delay time 15ns/80ns
Testing Conditions 300V, 1.2A, 200 Ohm, 15V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-223-4
Win Source Part Number 064357-SGM2N60UFTF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SGM2N60UFTF CAD Model

Description

The Fairchild/ON Semiconductor SGM2N60UFTF is a high-quality electronic component designed for use in a wide range of electronic devices.

  • With a medium popularity rating, this component is in high demand in the market. and is currently in balance supply and demand status.
  • Component Type: IGBT
  • Maximum Collector-Emitter Breakdown Voltage: 600V
  • Maximum Power Dissipation: 2.1W
  • Pulsed Collector Current: 10A
  • With its compact size and high-quality construction, the SGM2N60UFTF is a great choice for anyone looking for a reliable and high-performance electronic component.

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