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HGT1S12N60A4DS

Part No HGT1S12N60A4DS
Manufacturer Fairchild/ON Semiconductor
Catalog IGBTs - Single
Description 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube
Voltage - Collector Emitter Breakdown (Maximum) 600V
Current - Collector (Ic) (Maximum) 54A
Current - Collector Pulsed (Icm) 96A
Vce(on) (Maximum) @ Vge, Ic 2.7V @ 15V, 12A
Power - Max 167W
Switching Energy 55μJ (on), 50μJ (off)
Input Type Standard
Gate Charge 78nC
Td (on/off) @ 25°C 17ns/96ns
Test Condition 390V, 12A, 10 Ohm, 15V
Reverse Recovery Time (trr) 30ns
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Package TO-263AB
Win Source Part Number 1180340-HGT1S12N60A4DS
Manufacturer Homepage www.fairchildsemi.com
Popularity Medium
Supply and Demand Status Limited
Family Name HGT1S12N60A4DS
Introduction Date January 08, 2002
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2019
Quantity per package 800
Ultra Librarian 3D Model Ultra Librarian HGT1S12N60A4DS CAD Model

Description

The Fairchild/ON Semiconductor HGT1S12N60A4DS is a high voltage MOSFET transistor with a maximum voltage rating of 600V.

  • Common Use: Discrete semiconductor products
  • Popularity: Medium
  • Maximum Current Rating: 54A
  • Power Dissipation Rating: 167W
  • Switching Energy (on): 55μJ
  • Switching Energy (off): 50μJ
  • Gate Charge: 78nC

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Pricing & Ordering

Quantity Unit Price Ext. Price
11+ $4.7965 $52.7615
26+ $3.9356 $102.3256
40+ $3.8126 $152.5040
55+ $3.6896 $202.9280
71+ $3.5667 $253.2357
94+ $3.1977 $300.5838
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,000 pieces
MOQ: 11 pcs
Order Increment : 1 pcs
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