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Same model may have multiple batches, images only for reference.
G10N120BND Real Image
Same model may have multiple batches, images only for reference.

G10N120BND

Part No G10N120BND
Manufacturer Fairchild/ON Semiconductor
Catalog IGBTs - Single
Description IGBT 1200V 35A 298W TO247
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Not For New Designs
IGBT Type NPT
VCEO Maximum Collector-Emitter Breakdown Voltage 1200V
Maximum Current Collector 35A
Pulsed Collector Current 80A
Collector-emitter saturation voltage(Max) 2.7V @ 15V, 10A
Maximum Power Dissipation 298W
Total Switching Energy(Ets) 850μJ (on), 800μJ (off)
Input Type Standard
Gate Charge 100nC
Turn-on and Turn-off delay time 23ns/165ns
Testing Conditions 960V, 10A, 10 Ohm, 15V
Reverse Recovery Time (trr) 70ns
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247
Win Source Part Number 204380-G10N120BND
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian G10N120BND CAD Model

Description

The Fairchild/ON Semiconductor G10N120BND IGBT module is designed for high-power applications.

  • Maximum Collector-Emitter Breakdown Voltage: 1200V
  • Maximum Collector Current: 35A
  • Package: TO-247
  • Operating Temperature: -55°C to 150°C
  • Popularity: Medium
  • Supply and Demand: Limited
  • Status: Not for new designs

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