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Same model may have multiple batches, images only for reference.
FGPF30N45T Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

FGPF30N45T

Part No FGPF30N45T
Manufacturer Fairchild/ON Semiconductor
Catalog IGBTs - Single
Description IGBT 450V 50.4W TO220F
Datasheet
FGPF30N45T Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
IGBT Type Trench
VCEO Maximum Collector-Emitter Breakdown Voltage 450V
Pulsed Collector Current 120A
Collector-emitter saturation voltage(Max) 1.6V @ 15V, 20A
Maximum Power Dissipation 50.4W
Input Type Standard
Gate Charge 73nC
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220F
Win Source Part Number 067194-FGPF30N45T
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian FGPF30N45T CAD Model

Description

The Fairchild/ON Semiconductor FGPF30N45T is an N-channel trench IGBT that has a maximum collector-emitter breakdown voltage of 450V and a maximum power dissipation of 50.4W. It has a gate charge of 73nC and comes in a TO-220F package.

  • Maximum Collector-Emitter Breakdown Voltage: 450V
  • Maximum Power Dissipation: 50.4W
  • Gate Charge: 73nC
  • Package: TO-220F
  • Operating Temperature: -55°C to 150°C

It is ideal for use in various electronic circuits, including motor drives, power supplies, and inverters.

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