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Same model may have multiple batches, images only for reference.
FGH50N6S2D Real Image
Same model may have multiple batches, images only for reference.

FGH50N6S2D

Part No FGH50N6S2D
Manufacturer Fairchild/ON Semiconductor
Catalog IGBTs - Single
Description IGBT 600V 75A 463W TO247
Datasheet
FGH50N6S2D Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Not For New Designs
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 75A
Pulsed Collector Current 240A
Collector-emitter saturation voltage(Max) 2.7V @ 15V, 30A
Maximum Power Dissipation 463W
Total Switching Energy(Ets) 260μJ (on), 250μJ (off)
Input Type Standard
Gate Charge 70nC
Turn-on and Turn-off delay time 13ns/55ns
Testing Conditions 390V, 30A, 3 Ohm, 15V
Reverse Recovery Time (trr) 55ns
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247
Win Source Part Number 1038675-FGH50N6S2D
Popularity Medium
Supply and Demand Status Limited
Quantity per package 450
Ultra Librarian 3D Model Ultra Librarian FGH50N6S2D CAD Model

Description

The FGH50N6S2D IGBT is a collector-emitter voltage breakdown transistor manufactured by Fairchild/ON Semiconductor.

  • Maximum Collector-Emitter Breakdown Voltage: 600V
  • Maximum Power Dissipation: 463W
  • Gate Charge: 70nC
  • Reverse Recovery Time: 55ns
  • Case: TO-247
  • Mounting: Through Hole
  • Maximum Current Collector: 75A
  • Status: Not for new designs, limited supply and demand, medium popularity

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