The FGA20N120FTD is a 1200V N-Channel IGBT (Insulated Gate Bipolar Transistor) from Fairchild Semiconductor, now part of ON Semiconductor. This device is designed for high-voltage, high-current switching applications. It combines the advantages of MOSFETs and bipolar transistors, offering high input impedance and low on-state conduction losses.

Applications

• High-frequency inverters
• Uninterruptible power supplies (UPS)
• Welding equipment
• Induction heating
• Power factor correction (PFC) circuits
• Motor control

Features

• High speed switching
• Low saturation voltage: Minimizes conduction losses.
• High input impedance: Simplifies drive circuitry.
• Avalanche ruggedness: Provides greater reliability.
• Co-packaged with a fast recovery diode for improved performance in inductive loads.
• RoHS compliant

Benefits

• Increased efficiency in power conversion applications due to reduced switching and conduction losses.
• Simplified system design due to the high input impedance, requiring less complex gate drive circuits.
• Improved reliability and robustness, particularly in demanding applications with inductive loads.
• Reduced heat sink requirements due to lower power dissipation.
• Faster switching speeds enable higher frequency operation, leading to smaller and lighter designs.

Additional Details

The FGA20N120FTD features a collector-emitter voltage (VCE) of 1200V and a continuous collector current (IC) of 20A. The gate-emitter voltage (VGE) is typically ±20V. The operating junction temperature range is -55°C to +150°C. The device is typically packaged in a TO-3P package. The fast recovery diode ensures efficient freewheeling action, protecting the IGBT from voltage spikes during switching. This IGBT offers a good balance between conduction and switching losses, making it suitable for a wide range of power electronic applications where efficiency and reliability are crucial.