The FDP6688 is an N-Channel PowerTrench® MOSFET from Fairchild/ON Semiconductor designed for high-efficiency power conversion in various applications. This MOSFET utilizes advanced trench technology to minimize on-resistance and gate charge, resulting in improved power efficiency and switching performance. It is optimized for use in synchronous rectification, DC-DC conversion, and power supplies.

Applications:

• Synchronous Rectification in DC-DC converters
• DC-DC Conversion
• Power Supplies
• Load Switching
• Motor Control

Features:

• Low On-Resistance (Rds(on)): Reduces conduction losses for improved efficiency.
• Low Gate Charge (Qg): Minimizes switching losses, enabling faster switching speeds.
• High Drain Current Capability: Supports high power applications.
• Avalanche Rated: Provides enhanced reliability and ruggedness.
• 100% UIS Tested: Ensures robustness under inductive switching conditions.

Benefits:

• Improved Power Efficiency: Reduced conduction and switching losses lead to higher overall efficiency.
• Faster Switching: Enables higher frequency operation and reduced component size.
• Enhanced Reliability: Robust design ensures stable and reliable performance in demanding applications.
• Simplified Design: Logic level gate drive simplifies interfacing with control circuitry.
• Reduced Heat Dissipation: Thermally efficient package lowers operating temperature.

Additional Details:

The FDP6688 is particularly well-suited for synchronous rectification in DC-DC converters, where it replaces traditional diodes to significantly reduce conduction losses. Its low gate charge enables fast switching speeds, which is crucial for high-frequency power conversion. The device’s avalanche rating and 100% UIS testing further enhance its reliability and robustness. The thermally enhanced TO-220 package ensures efficient heat dissipation, maintaining stable operation even under high power conditions.

Specifications:

• Polarity: N-Channel
• Drain-Source Voltage (Vds): 30V
• Gate-Source Voltage (Vgs): ±20V
• Continuous Drain Current (Id): 25A
• On-Resistance (Rds(on)): 0.0115Ω @ Vgs = 10V