The FDD24AN06AO is an N-Channel enhancement mode PowerTrench® MOSFET from Fairchild Semiconductor/ON Semiconductor. This MOSFET is designed to provide high power and efficiency in a variety of applications. It features a low on-resistance and gate charge, contributing to reduced power losses and improved switching performance.

Applications

• Synchronous Rectification in AC/DC and DC/DC converters
• Motor control
• Uninterruptible Power Supplies (UPS)
• DC-DC conversion
• Power Tools

Features

• Low on-resistance: RDS(on) = 0.0075Ω (Typ.) @ VGS = 10V, ID = 24A
• High current capability: ID = 80A
• Low gate charge: Qg = 35nC (Typ.) @ VGS = 10V
• Low Drain-Source Capacitance
• 100% UIS Tested
• RoHS Compliant

Benefits

• Improved Efficiency: Low RDS(on) minimizes conduction losses, leading to greater overall efficiency in power conversion applications.
• Reduced Switching Losses: Low gate charge results in faster switching speeds and reduced switching losses.
• Enhanced Thermal Performance: Capable of handling high currents while maintaining low temperatures.
• High Reliability: Robust design and manufacturing processes ensure long-term reliability.
• Simplified Design: Easy to implement and integrate into existing circuits.

Additional Details

The FDD24AN06AO is available in a TO-252 package. This package is designed for surface mounting on printed circuit boards. The device is specifically engineered for applications that require high efficiency and power density. This MOSFET is characterized by its avalanche capability and robustness, making it suitable for demanding applications. Its drain-source voltage is rated at 60V. Continuous drain current at VGS=10V is 24A, and pulsed drain current is 80A. The power dissipation is 71W.