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FDA50N50 FDA38N30

Part No FDA50N50 FDA38N30
Manufacturer Fairchild/ON Semiconductor
Catalog Electronic Wholesale
Sample
Rohs State Need to verify
ECAD Module
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Reference case TO-3P
Manufacturer Fairchild/ON Semiconductor
Manufacturer Homepage www.fairchildsemi.com
RoHS State Request Verification
Win Source Part Number 758487-FDA50N50 FDA38N30
Popularity Low
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian FDA50N50 FDA38N30 CAD Model

Description

The FDA50N50 and FDA38N30 are N-channel MOSFETs manufactured by Fairchild Semiconductor (now ON Semiconductor). These MOSFETs are designed for high-voltage, high-current switching applications. They are commonly used in power supplies, motor drives, and other power electronic circuits.

Applications

  • Switch-mode power supplies (SMPS)
  • Motor control circuits
  • Uninterruptible power supplies (UPS)
  • Inverters
  • DC-DC converters

Features

  • N-Channel MOSFET: Enhances switching speed and efficiency.
  • High Voltage Rating: Suitable for high-voltage applications.
  • Low On-Resistance (RDS(on)): Minimizes conduction losses.
  • Fast Switching Speed: Reduces switching losses and improves efficiency.
  • Avalanche Ruggedness: Provides robustness against voltage transients.

Benefits

  • Improved Efficiency: Reduces power consumption and heat generation.
  • Enhanced Reliability: Robust design ensures long-term performance.
  • Simplified Circuit Design: Easy to integrate into existing and new designs.
  • Reduced EMI: Fast switching characteristics minimize electromagnetic interference.
  • Cost-Effective Solution: Provides a balance of performance and price.

Additional Details

The FDA50N50 has a drain-source voltage (VDS) rating of 500V and a continuous drain current (ID) of 50A. The FDA38N30 has a VDS rating of 300V and an ID of 38A. These MOSFETs are typically packaged in TO-247 or similar through-hole packages. The low on-resistance ensures minimal power dissipation during conduction, while the fast switching speed reduces switching losses. These characteristics make them suitable for high-efficiency power electronic applications.

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