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FCD380N60ECT

Part No FCD380N60ECT
Manufacturer Fairchild/ON Semiconductor
Catalog OEM Parts (F - I)
Sample
Rohs State Need to verify
ECAD Module
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Win Source Part Number 971142-FCD380N60ECT
Categories OEM Parts(F-I)
Manufacturer Fairchild/ON Semiconductor
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian FCD380N60ECT CAD Model

Description

The FCD380N60ECT is a 600V N-Channel SuperFET® III Easy Drive MOSFET from Fairchild Semiconductor, now ON Semiconductor. It's designed to offer superior switching performance and higher avalanche ruggedness, making it suitable for a wide range of power applications. This MOSFET utilizes Fairchild's advanced SuperFET® III technology, providing a lower on-resistance (RDS(on)) and improved switching characteristics compared to conventional MOSFETs.

Applications:

  • Power factor correction (PFC) circuits: Used in the input stage of power supplies to improve energy efficiency.
  • Uninterruptible power supplies (UPS): Employed in UPS systems to provide backup power during power outages.
  • Solar inverters: Used in solar inverters to convert DC power from solar panels to AC power for grid connection.
  • Switch-mode power supplies (SMPS): Ideal for various SMPS applications requiring high efficiency and reliability.
  • Lighting applications: Used in electronic ballasts and LED lighting systems.

Features:

  • 600V Drain-Source Voltage (VDS): High voltage rating for demanding power applications.
  • Low On-Resistance (RDS(on)): Reduces conduction losses, improving efficiency.
  • High Avalanche Energy (EAS): Enhances ruggedness and reliability under avalanche conditions.
  • SuperFET® III Technology: Provides superior performance and efficiency compared to conventional MOSFETs.
  • Easy Drive series: Gate charge optimized for easier gate drive and lower switching losses.

Benefits:

  • Improved Efficiency: Lower on-resistance and switching losses contribute to higher energy efficiency in power supplies and other applications.
  • Enhanced Reliability: High avalanche energy rating ensures robust performance under transient conditions.
  • Simplified Design: Optimized gate charge simplifies gate drive design, reducing component count and cost.
  • Reduced Heat Dissipation: Lower RDS(on) minimizes heat generation, improving thermal management.
  • Higher Power Density: Enables the design of more compact and efficient power converters.

Technical Specifications: The FCD380N60ECT has a drain current (ID) rating of up to 30A (depending on case temperature), a gate-source voltage (VGS) rating of ±30V, and a maximum operating junction temperature of 150°C. It is typically available in a TO-220F package, providing good thermal performance. The device is RoHS compliant, adhering to environmental standards. It is designed for fast switching and high efficiency, making it a suitable choice for modern power electronics.

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