The F59L1G81MA-25TG2Y is a high-performance 1 Gigabit (128M x 8) NAND Flash memory device manufactured by ESMT. This memory component is designed for applications requiring high-density, low-power, and reliable non-volatile storage.

Applications:

• Embedded systems
• Mobile devices
• Industrial control systems
• Consumer electronics
• Networking equipment

Features:

• 1 Gigabit (128M x 8) NAND Flash memory
• Operating Voltage: 2.7V to 3.6V
• Page Size: (2048 + 64) bytes
• Block Size: (64 pages + 2048) bytes
• Fast program and erase performance
• High reliability with built-in error correction code (ECC)
• Data retention: 10 years
• RoHS compliant
• TSOP48 package

Benefits:

• High storage capacity in a compact form factor.
• Low power consumption, extending battery life in portable applications.
• Fast access times improve system performance.
• Robust data protection through ECC ensures data integrity.
• Long-term data retention guarantees data availability.
• Wide operating temperature range enables use in diverse environments.

Technical Specifications:

The F59L1G81MA-25TG2Y operates within a voltage range of 2.7V to 3.6V. It features a page size of 2112 bytes (2048 + 64 spare bytes) and a block size of 135,168 bytes (64 pages + spare bytes). The device incorporates ECC for enhanced data reliability. It's available in a TSOP48 package, which is industry standard and allows for easy integration into various systems. The device offers fast page program and block erase times, contributing to efficient data handling. The data retention is guaranteed for 10 years, and the component is RoHS compliant, ensuring environmental safety.