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Win Source Part Number WS1203606-EPC2305ENGRT
Manufacturer EPC
Category Discrete Semiconductor Products -Transistors- FETs, MOSFETs- Single FETs, MOSFETs
Package Tape & Reel (TR) Cut Tape (CT)
Product Status Active
FET Type N-Channel
Technology GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 150 V
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 7-QFN (3x5)
Ultra Librarian 3D Model Ultra Librarian EPC2305ENGRT CAD Model

Description

The EPC2305 is a 150 V eGaN® power transistor in a low inductance 3 x 5 mm QFN package with exposed top for excellent thermal management. The thermal resistance to case top is ~0.2 °C/W, resulting in excellent thermal behavior and easy cooling. The device features an enhanced PQFN “Thermal-Max” package. The exposed top enhances top-side thermal management and the side-wettable flanks guarantee that the complete side-pad surface is wetted with solder during the reflow soldering process, which protects the copper and allows soldering to occur on this external flank area for easy optical inspection.

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