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EPC2106

Part No EPC2106
Manufacturer EPC
Catalog FETs - Arrays
Description GANFET TRANS SYM 100V BUMPED DIE / Mosfet Array 100V 1.7A Surface Mount Die
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors>FETs, MOSFETs>FET, MOSFET Arrays
Mfr EPC
Series eGaN®
Package Tape & Reel
Technology GaNFET (Gallium Nitride)
Configuration 2 N-Channel (Half Bridge)
FET Feature -
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 1.7A
Rds On (Max) @ Id, Vgs 70mOhm @ 2A, 5V
Vgs(th) (Max) @ Id 2.5V @ 600µA
Gate Charge (Qg) (Max) @ Vgs 0.73nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 75pF @ 50V
Power - Max -
Temperature Range - Operating -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case Die
Supplier Device Package Die
Base Product Number EPC210
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0040
Standard Package 2,500 pcs
Win Source Part Number 1382021-EPC2106
Ultra Librarian 3D Model Ultra Librarian EPC2106 CAD Model

Description

The 1382021-EPC2106 is a FET (Field-Effect Transistor) array manufactured by EPC.

  • Series: eGaN
  • Technology: GaNFET (Gallium Nitride)
  • Packaging: Tape and Reel
  • Standard Package: 2,500 pieces
  • FET Configuration: 2 N-Channel (Half Bridge)
  • Drain to Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id) @ 25°C: 1.7A
  • On-Resistance (Rds On) Max: 70mOhm @ 2A and 5V gate-source voltage (Vgs)
  • Gate-Source Threshold Voltage (Vgs(th)): 2.5V @ 600µA
  • ECCN: EAR99
  • REACH Affected: No
  • HTSUS Code: 8541.29.0040
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Base Product Number: EPC210

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.3063 $58.7835
110+ $1.0718 $117.8980
170+ $1.0383 $176.5110
230+ $1.0049 $231.1270
300+ $0.9714 $291.4200
400+ $0.8709 $348.3600
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,500 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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