EPC2106 Real Image1
Same model may have multiple batches, images only for reference.

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Category Discrete Semiconductor Products>Transistors>FETs, MOSFETs>FET, MOSFET Arrays
Mfr EPC
Series eGaN®
Package Tape & Reel
Technology GaNFET (Gallium Nitride)
Configuration 2 N-Channel (Half Bridge)
FET Feature -
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 1.7A
Rds On (Max) @ Id, Vgs 70mOhm @ 2A, 5V
Vgs(th) (Max) @ Id 2.5V @ 600µA
Gate Charge (Qg) (Max) @ Vgs 0.73nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 75pF @ 50V
Power - Max -
Temperature Range - Operating -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case Die
Supplier Device Package Die
Base Product Number EPC210
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0040
Standard Package 2,500 pcs
Win Source Part Number 1382021-EPC2106
Ultra Librarian 3D Model Ultra Librarian EPC2106 CAD Model

Description

The 1382021-EPC2106 is a FET (Field-Effect Transistor) array manufactured by EPC.

  • Series: eGaN
  • Technology: GaNFET (Gallium Nitride)
  • Packaging: Tape and Reel
  • Standard Package: 2,500 pieces
  • FET Configuration: 2 N-Channel (Half Bridge)
  • Drain to Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id) @ 25°C: 1.7A
  • On-Resistance (Rds On) Max: 70mOhm @ 2A and 5V gate-source voltage (Vgs)
  • Gate-Source Threshold Voltage (Vgs(th)): 2.5V @ 600µA
  • ECCN: EAR99
  • REACH Affected: No
  • HTSUS Code: 8541.29.0040
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Base Product Number: EPC210

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.4962 $52.3670
85+ $1.2277 $104.3545
130+ $1.1893 $154.6090
175+ $1.1509 $201.4075
225+ $1.1126 $250.3350
305+ $0.9975 $304.2375
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 4,369 pieces
MOQ: 35 pcs
Order Increment : 1 piece
*Need More Quantity? *Request a Bulk Quantity Quotation?
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