The EM Microelectronic EM6324QYSP5B-2.0 is a low-power, high-performance SRAM (Static Random-Access Memory) module. It is designed for use in embedded systems, portable devices, and other applications where low power consumption and high speed are critical. This memory module offers a combination of fast access times and low standby current, making it suitable for battery-powered and energy-sensitive applications.

Applications:

• Embedded systems
• Portable devices (e.g., wearables, sensors)
• Data logging
• Instrumentation
• Industrial control systems

Features:

• Density: 4Mbit (256K x 16)
• Supply Voltage: 2.0V
• Fast Access Time: Typically 70 ns
• Low Standby Current: Typically 5 μA
• Operating Temperature Range: -40°C to +85°C
• Package: 44-pin TSOP
• Data Retention Voltage: 1.5V

Benefits:

• Low power consumption extends battery life in portable devices.
• Fast access time ensures high-speed data processing.
• Wide operating temperature range allows for reliable operation in harsh environments.
• Small package size enables compact system designs.
• Non-volatile data retention ensures data integrity even when power is removed.

Additional Details:

The EM6324QYSP5B-2.0 SRAM module is organized as 256K words by 16 bits. It operates from a 2.0V power supply and features a typical access time of 70 nanoseconds, enabling fast data reads and writes. The extremely low standby current minimizes power consumption when the device is not actively being accessed. The module is packaged in a 44-pin TSOP (Thin Small Outline Package), allowing for easy integration into surface-mount PCB designs.

The SRAM module is designed for reliable data retention, ensuring that data is preserved even when the power supply is removed. It also incorporates protection against electrostatic discharge (ESD) to enhance its robustness in demanding applications. This memory module is commonly used as a buffer, cache, or working memory in a wide range of electronic devices and systems.