The BZX85B47 is a 1.3W Zener diode manufactured by EIC Discrete Semiconductors. This diode is designed to provide a stable reference voltage of 47V in a variety of electronic circuits.
The BZX85B47 is a silicon planar Zener diode housed in a DO-41 package. It is designed to maintain a constant voltage across its terminals when the current flowing through it is above its knee current and below its maximum current rating. This makes it ideal for voltage regulation, voltage clipping, and surge protection applications.
Applications
- Voltage Regulation: Maintaining a stable voltage in power supplies and other circuits.
- Voltage Clipping: Limiting the voltage to a certain level to protect sensitive components.
- Surge Protection: Protecting circuits from voltage spikes and transients.
- Reference Voltage Generation: Providing a stable reference voltage for analog circuits.
- Overvoltage Protection: Protecting circuits from overvoltage conditions.
Features
- Zener Voltage of 47V: Provides a stable reference voltage of 47V.
- Power Dissipation of 1.3W: Can handle relatively high power dissipation.
- Low Reverse Leakage Current: Minimizes current leakage in the reverse direction.
- DO-41 Package: Standard through-hole package for easy mounting.
- High Surge Current Capability: Can withstand high surge currents.
Benefits
- Stable Voltage Regulation: Provides a stable and accurate reference voltage.
- Circuit Protection: Protects circuits from voltage spikes and overvoltage conditions.
- Easy to Use: Simple to implement in circuit designs.
- Reliable Operation: Provides reliable performance over a wide range of operating conditions.
- Cost-Effective: Provides a cost-effective solution for voltage regulation and protection.
Key specifications for the BZX85B47 include a Zener voltage (Vz) of 47V, a power dissipation (Pd) of 1.3W, and a forward voltage (Vf) of approximately 1V at a forward current of 200mA. The Zener voltage tolerance is typically ±5%. The operating temperature range is typically -65°C to +175°C. It is crucial to ensure proper heat sinking to prevent the diode from overheating, especially at higher power dissipation levels.