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ZXMC3A16DN8QTA

Part No ZXMC3A16DN8QTA
Manufacturer Diodes Incorporated
Catalog FETs - Arrays
Description MOSFET BVDSS: 25V~30V SO-8 T&R 0
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays
Mfr Diodes Incorporated
Series Automotive, AEC-Q101
Package Tape & Reel
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration N and P-Channel Complementary
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 6.4A (Ta), 5.4A (Ta)
Rds On (Max) @ Id, Vgs 35mOhm @ 9A, 10V, 48mOhm @ 4.2A, 10V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 17.5nC @ 10V, 24.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 796pF @ 25V, 970pF @ 15V
Power - Max 1.25W (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SO
Base Product Number ZXMC3
Standard Package 500 pcs
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1106413-ZXMC3A16DN8QTA
Ultra Librarian 3D Model Ultra Librarian ZXMC3A16DN8QTA CAD Model

Description

Introducing the ZXMC3A16DN8QTA from Diodes Incorporated

The ZXMC3A16DN8QTA is a high-performance, dual N-channel enhancement mode field-effect transistor (FET) designed by Diodes Incorporated, a leading manufacturer and supplier of high-quality semiconductor products. This advanced MOSFET is engineered to deliver efficient power conversion and switching with a focus on minimizing losses and enhancing thermal performance. It is an ideal component for a wide range of applications, including power management, DC-DC conversion, and motor control circuits.

Key Features and Benefits:

  • Low On-Resistance: The ZXMC3A16DN8QTA boasts an exceptionally low on-resistance, which translates to reduced conduction losses and improved overall efficiency in electronic circuits.
  • High-Speed Switching: With its fast switching capabilities, this MOSFET is able to operate at higher frequencies, making it suitable for modern high-speed power switching applications.
  • Dual N-Channel Configuration: The dual N-channel design enables the integration of two independent transistors in a single package, saving space and simplifying circuit design.
  • PowerDI® 8x8 Package: The device comes encapsulated in Diodes Incorporated's proprietary PowerDI® 8x8 package, which offers excellent thermal performance and a compact footprint for space-sensitive applications.
  • High Continuous Drain Current: With a high continuous drain current rating, the ZXMC3A16DN8QTA can handle significant power levels, making it suitable for demanding power applications.
  • Thermal Management: The advanced packaging and internal design contribute to superior thermal management, ensuring reliability even under high operating temperatures.

Applications:

The versatility of the ZXMC3A16DN8QTA allows it to be used in a variety of applications, such as:

  • Power supply circuits
  • DC-DC converters
  • Motor control systems
  • Load switches
  • Battery management systems
  • Power distribution networks

With its robust performance characteristics and compact design, the ZXMC3A16DN8QTA from Diodes Incorporated stands out as a superior choice for designers looking to optimize their power management and switching solutions. Its integration into your next project can help achieve higher efficiency, reliability, and compactness, aligning with the stringent demands of modern electronic applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.1963 $59.8150
120+ $0.9817 $117.8040
185+ $0.9510 $175.9350
255+ $0.9203 $234.6765
325+ $0.8897 $289.1525
435+ $0.7976 $346.9560
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,500 pieces
MOQ: 50 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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