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DMTH8030LPDWQ-13

Part No DMTH8030LPDWQ-13
Manufacturer Diodes Incorporated
Catalog FETs - Arrays
Description MOSFET BVDSS: 61V~100V POWERDI50 / Mosfet Array 80V 28.5A (Tc) 3.1W (Ta), 41W (Tc) Surface Mount PowerDI5060-8 (Type UXD)
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays
Mfr Diodes Incorporated
Series Automotive, AEC-Q101
Package Tape & Reel
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual)
Drain to Source Voltage (Vdss) 80V
Current - Continuous Drain (Id) @ 25°C 28.5A (Tc)
Rds On (Max) @ Id, Vgs 26mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 10.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 631pF @ 40V
Power - Max 3.1W (Ta) , 41W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Supplier Device Package PowerDI5060-8 (Type UXD)
Base Product Number DMTH8030
Standard Package 2,500
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1350228-DMTH8030LPDWQ-13
Ultra Librarian 3D Model Ultra Librarian DMTH8030LPDWQ-13 CAD Model

Description

DMTH8030LPDWQ-13 - A High-Efficiency MOSFET from Diodes Incorporated

The DMTH8030LPDWQ-13 is a state-of-the-art, dual N-channel enhancement mode field effect transistor (MOSFET) designed and manufactured by Diodes Incorporated, a leading global provider of high-quality semiconductor products. This MOSFET is part of Diodes Incorporated's extensive range of power management devices, tailored for energy-efficient and compact solutions.

Encased in a space-saving PowerDI5060-8 package, the DMTH8030LPDWQ-13 offers a low profile and low resistance path for electronic currents, making it an ideal choice for power management tasks in a wide array of applications. Its dual MOSFET configuration allows for flexibility in design, providing engineers with the ability to use the device in both synchronous and non-synchronous buck converter topologies.

With a continuous drain current (ID) of 30A at a temperature of 25°C, this MOSFET can handle significant power without compromising on performance. Its low on-resistance (RDS(on)) ensures high efficiency, which is critical for reducing power losses in electronic circuits. The RDS(on) values are as low as 2.6mΩ at VGS = 10V, which is indicative of the MOSFET's ability to conduct electricity with minimal resistance and heat dissipation.

The DMTH8030LPDWQ-13 operates over a wide temperature range, maintaining reliability and performance from -55°C to 150°C. This broad operating range makes it suitable for use in harsh environments and demanding applications, including consumer electronics, computing devices, power supplies, and industrial systems.

Additional features of the DMTH8030LPDWQ-13 include its fast switching speed and low gate charge, which further enhance its efficiency in high-frequency applications. The device is also RoHS compliant, reflecting Diodes Incorporated's commitment to environmental sustainability.

In summary, the DMTH8030LPDWQ-13 from Diodes Incorporated is a high-performance, dual N-channel MOSFET that offers designers a combination of low on-resistance, high current capability, and efficient power handling in a compact package. Its robust design and versatile features make it an excellent choice for a wide range of power management applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
19+ $2.6666 $50.6654
46+ $2.1880 $100.6480
71+ $2.1196 $150.4916
98+ $2.0513 $201.0274
127+ $1.9829 $251.8283
169+ $1.7778 $300.4482
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 760 pieces
MOQ: 19 pcs
Order Increment : 1 pcs
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