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DMTH6010LPD-13

Part No DMTH6010LPD-13
Manufacturer Diodes Incorporated
Catalog FETs - Arrays
Description MOSFET 2N-CHA 60V 13.1A POWERDI / 60V 175C DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Sample
Rohs State rohs
ECAD Module
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Manufacturer Diodes Incorporated
Packaging Reel
FET Type 2 N-Channel (Dual)
FET Feature Standard
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) at 25°C 13.1A , 47.6A (Tc)
Rds On (Maximum) at Id, Vgs 11mOhm at 20A, 10V
Vgs(th) (Maximum) at Id 3V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 40.2nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds 2615pF at 30V
Power - Max 2.8W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style SMD
Manufacturer Package 8-PowerTDFN
Supplier Device Package PowerDI5060-8
Manufacturer Pack Quantity 2,500
MSL Level 1 (Unlimited)
Popularity High
Supply and Demand Status Sufficient
Win Source Part Number 800895-DMTH6010LPD-13
Ultra Librarian 3D Model Ultra Librarian DMTH6010LPD-13 CAD Model

Description

DMTH6010LPD-13 MOSFET by Diodes Incorporated

The DMTH6010LPD-13 is a high-performance, dual N-channel enhancement mode field-effect transistor (MOSFET) designed and manufactured by Diodes Incorporated. As a testament to its efficiency and reliability, this MOSFET is a popular choice among professionals in the electronics industry for a wide range of applications, including power management, load switching, and motor control in consumer, industrial, and automotive environments.

Constructed with advanced trench technology, the DMTH6010LPD-13 features two MOSFETs in a single package, which not only saves space but also reduces costs by simplifying the design and minimizing the number of components required. The device is housed in a PowerDI®5060-8 Type D package, which is known for its low thermal resistance, ensuring efficient heat dissipation during operation.

Key specifications of the DMTH6010LPD-13 include a drain-source voltage (VDS) of 60V, a continuous drain current (ID) of up to 12A per channel at 25°C, and a low on-resistance (RDS(on)) as low as 8.8mΩ at VGS=10V. This low RDS(on) translates to reduced conduction losses, making the MOSFET highly efficient for power-intensive applications. The device also features fast switching speeds, which is crucial for high-frequency circuits and helps to minimize energy losses during the switching process.

The DMTH6010LPD-13 is also characterized by its robustness, with an integrated gate-source ESD protection diode that safeguards the device against electrostatic discharge events. Additionally, it is fully RoHS compliant, reflecting Diodes Incorporated's commitment to environmental responsibility and the production of eco-friendly products.

In summary, the DMTH6010LPD-13 from Diodes Incorporated is a dual N-channel MOSFET that offers a compact, high-efficiency solution for a variety of power handling applications. Its advanced features and durable design make it an excellent choice for engineers looking to optimize their circuit designs for performance and reliability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.8974 $58.3310
140+ $0.8395 $117.5300
215+ $0.8106 $174.2790
310+ $0.7526 $233.3060
400+ $0.7237 $289.4800
500+ $0.6948 $347.4000
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,750 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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