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DMP6023LEQ-13

Part No DMP6023LEQ-13
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 60V 7A SOT223 T&R / P-Channel 60 V 7A (Ta), 18.2A (Tc) 2W (Ta), 17.3W (Tc) Surface Mount SOT-223-3
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Diodes Incorporated
Series Automotive, AEC-Q101
Package Tape & Reel (TR)
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 7A (Ta), 18.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 28mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 53.1 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2569 pF @ 30 V
Power Dissipation (Max) 2W (Ta), 17.3W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package SOT-223-3
Package / Case TO-261-4, TO-261AA
Base Product Number DMP6023
MSL Level 1 (Unlimited)
REACH Status REACH Affected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 2,500
Win Source Part Number 1055797-DMP6023LEQ-13
Ultra Librarian 3D Model Ultra Librarian DMP6023LEQ-13 CAD Model

Description

Introducing the DMP6023LEQ-13 P-Channel MOSFET by Diodes Incorporated

The DMP6023LEQ-13 is a high-performance P-Channel enhancement mode field-effect transistor (MOSFET) designed and manufactured by the renowned semiconductor company, Diodes Incorporated. This component is engineered to deliver efficient power management and control in a variety of applications. With its compact form factor and robust capabilities, the DMP6023LEQ-13 is an ideal choice for designers looking to optimize their power circuitry.

Constructed with advanced trench technology, the DMP6023LEQ-13 MOSFET offers a low on-resistance (RDS(on)) which enhances its overall efficiency by minimizing conduction losses. This feature makes it particularly well-suited for load switch and battery protection applications where energy efficiency is paramount. The device operates at a -60V drain-source breakdown voltage (VDSS), ensuring a good safety margin for most low to medium power applications.

The DMP6023LEQ-13 comes in a compact, thermally efficient PowerDI5060-8 package, which not only saves valuable board space but also supports better thermal dissipation. This is critical for maintaining performance and reliability in scenarios where the device is subjected to high continuous or pulsed currents. Moreover, the MOSFET is characterized by a low threshold voltage (VGS(th)), enabling it to be easily controlled with logic-level voltages, which is advantageous for low-voltage drive requirements.

With continuous drain currents (ID) up to -4.7A and pulsed drain currents (IDM) up to -18.8A, the DMP6023LEQ-13 is capable of handling significant power levels, making it suitable for a wide range of applications, including power management in portable devices, DC/DC converters, and other battery-operated systems. Its robustness is further enhanced by its -20V gate-source voltage (VGS), which provides a good margin against gate over-voltage conditions.

For designers and engineers seeking a reliable and efficient P-Channel MOSFET, the DMP6023LEQ-13 by Diodes Incorporated offers a compelling solution. Its combination of low on-resistance, high current handling, and a compact footprint make it an excellent choice for modern electronic applications where performance and space are at a premium.

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Pricing & Ordering

Quantity Unit Price Ext. Price
120+ $0.4223 $50.6760
290+ $0.3465 $100.4850
450+ $0.3357 $151.0650
620+ $0.3249 $201.4380
800+ $0.3141 $251.2800
1,070+ $0.2816 $301.3120
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 60,000 pieces
MOQ: 120 pcs
Order Increment : 1 pcs
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