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DMN53D0LQ-7

Part No DMN53D0LQ-7
Manufacturer Diodes Incorporated
Catalog FETs - Single
Description MOSFET N-CH 50V 0.5A SOT23 / N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Sample
Rohs State rohs
ECAD Module
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Manufacturer Diodes Incorporated
Packaging Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 50V
Current - Continuous Drain (Id) at 25°C 500mA
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
Rds On (Maximum) at Id, Vgs 1.6Ohm at 500mA, 10V
Vgs(th) (Maximum) at Id 1.5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 0.6nC at 4.5V
Maximum Vgs ±20V
Input Capacitance (Ciss) (Maximum) at Vds 46pF at 25V
Power Dissipation (Maximum) 370mW
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package SOT-23
Manufacturer Package TO-236-3, SC-59, SOT-23-3
Manufacturer Pack Quantity 3,000
MSL Level 1 (Unlimited)
Popularity Medium
Supply and Demand Status Balance
Win Source Part Number 803560-DMN53D0LQ-7
Ultra Librarian 3D Model Ultra Librarian DMN53D0LQ-7 CAD Model

Description

Product Overview: DMN53D0LQ-7 from Diodes Incorporated

The DMN53D0LQ-7 is a high-performance, N-Channel MOSFET designed and manufactured by Diodes Incorporated, a leading company in the semiconductor market. This MOSFET is part of Diodes Incorporated's extensive range of discrete, analog, and mixed-signal components that cater to a wide variety of applications across multiple industries.

Constructed with advanced trench technology, the DMN53D0LQ-7 offers excellent on-state resistance (R<sub>DS(on)) and low gate charge, making it an efficient choice for power management tasks. The device is housed in a compact SOT-23 package, which is ideal for space-constrained applications while still providing the thermal performance required for reliable operation.

Key Features

  • Low On-Resistance: The device features a low on-resistance, which minimizes conduction losses and improves overall efficiency, a critical aspect for power-sensitive designs.
  • High-Speed Switching: With fast switching capabilities, the DMN53D0LQ-7 is suitable for high-frequency circuits, contributing to reduced switching losses.
  • Low Threshold Voltage: The low threshold voltage ensures that the MOSFET can be driven at lower gate voltages, making it compatible with logic-level circuits and reducing power consumption.
  • RoHS Compliant: This product is RoHS compliant, meeting the environmental standards that restrict the use of certain hazardous substances in electrical and electronic equipment.

Applications

The versatility of the DMN53D0LQ-7 allows it to be used in a variety of applications, including but not limited to:

  • Power Management Circuits
  • DC-DC Converters
  • Battery Powered Devices
  • Load Switches
  • Motor Control Systems

Reliability and Quality

Diodes Incorporated is committed to providing high-quality products. The DMN53D0LQ-7 is subjected to rigorous testing and quality control measures to ensure it meets the industry standards for reliability and performance. Customers can trust this MOSFET to deliver consistent performance over its intended lifespan.

In summary, the DMN53D0LQ-7 N-Channel MOSFET from Diodes Incorporated stands out for its efficient power management, fast switching, and compact form factor, making it an excellent choice for designers looking to optimize their electronic designs for both performance and size.

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Pricing & Ordering

Quantity Unit Price Ext. Price
530+ $0.0944 $50.0320
1,135+ $0.0884 $100.3340
1,760+ $0.0854 $150.3040
2,520+ $0.0795 $200.3400
3,270+ $0.0765 $250.1550
4,085+ $0.0735 $300.2475
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 165,000 pieces
MOQ: 530 pcs
Order Increment : 1 pcs
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