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DMN2027USS-13

Part No DMN2027USS-13
Manufacturer Diodes Incorporated
Catalog FETs - Single
Description 20V N-CHANNEL ENHANCEMENT MODE MOSFET
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products
Family FETs - Single
Manufacturer Diodes Incorporated
Win Source Part Number 252614-DMN2027USS-13
Family Name DMN2027USS
Introduction Date March 01, 2006
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2026
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian DMN2027USS-13 CAD Model

Description

DMN2027USS-13 MOSFET

The DMN2027USS-13 is a high-performance, dual N-channel enhancement mode field effect transistor (MOSFET) designed and manufactured by Diodes Incorporated. This MOSFET is a testament to Diodes Incorporated's commitment to providing energy-efficient and compact solutions for a wide range of electronic applications. It comes in a small 3.3mm x 3.3mm U-DFN3030-8 package, making it ideal for space-constrained applications.

The DMN2027USS-13 boasts a low on-resistance of just 24mΩ at V<sub>GS = 10V, which ensures minimal power loss and improved efficiency in operation. This feature, combined with its high continuous drain current of 6.5A, makes it an excellent choice for power management tasks in complex electronic circuits. The device operates over a wide range of gate threshold voltages, typically from 0.45V to 1.0V, providing designers with flexibility and ease of use in various circuit configurations.

With a maximum power dissipation of 2.5W, the DMN2027USS-13 is capable of handling significant levels of power despite its small footprint. Its fast switching speed and low gate charge are critical for high-frequency applications, enabling efficient power conversion and reducing switching losses. This MOSFET is also characterized by its robustness, featuring a 20V maximum drain-source voltage (V<sub>DSS) and a 12V maximum gate-source voltage (V<sub>GSS), providing a margin of safety for transient conditions.

The DMN2027USS-13 is RoHS compliant and halogen-free, reflecting Diodes Incorporated's dedication to environmental responsibility. It is designed for use in a variety of applications, including load switches, power management in portable devices, DC-DC converters, and other high-efficiency power control scenarios. This MOSFET's combination of low on-resistance, high current capability, and compact size makes it an excellent choice for engineers looking to optimize their power designs for both performance and space savings.

Key Features:

  • Dual N-Channel Enhancement Mode
  • Low On-Resistance: 24mΩ
  • High Continuous Drain Current: 6.5A
  • Wide Gate Threshold Voltage Range
  • Maximum Power Dissipation: 2.5W
  • Fast Switching Speed and Low Gate Charge
  • RoHS Compliant and Halogen-Free

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Pricing & Ordering

Quantity Unit Price Ext. Price
170+ $0.2952 $50.1840
415+ $0.2423 $100.5545
640+ $0.2347 $150.2080
885+ $0.2271 $200.9835
1,140+ $0.2196 $250.3440
1,525+ $0.1968 $300.1200
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 84,766 pieces
MOQ: 170 pcs
Order Increment : 1 pcs
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