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DMN2014LHAB-7

Part No DMN2014LHAB-7
Manufacturer Diodes Incorporated
Catalog FETs - Arrays
Description MOSFET 2N-CH 20V 9A 6-UDFN / DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer Diodes Incorporated
Packaging Reel
FET Type 2 N-Channel (Dual) Common Drain
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) at 25°C 9A
Rds On (Maximum) at Id, Vgs 13mOhm at 4A, 4.5V
Vgs(th) (Maximum) at Id 1.1V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 16nC at 4.5V
Input Capacitance (Ciss) (Maximum) at Vds 1550pF at 10V
Power - Max 800mW
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Manufacturer Package 6-UFDFN Exposed Pad
Supplier Device Package U-DFN2030-6 (Type B)
Manufacturer Pack Quantity 3,000
MSL Level 1 (Unlimited)
Popularity High
Supply and Demand Status Sufficient
Win Source Part Number 801215-DMN2014LHAB-7
Ultra Librarian 3D Model Ultra Librarian DMN2014LHAB-7 CAD Model

Description

Product Overview: DMN2014LHAB-7 from Diodes Incorporated

The DMN2014LHAB-7 is a high-performance, N-channel enhancement mode field-effect transistor (FET) designed and manufactured by Diodes Incorporated. This MOSFET is part of Diodes Incorporated's extensive range of semiconductor products and is engineered to meet the requirements of modern electronic devices that demand low power consumption, high efficiency, and compact design.

Key Features

  • Low On-Resistance (R<sub>DS(on)): The DMN2014LHAB-7 boasts a very low on-resistance, which significantly reduces conduction losses and enhances overall efficiency, making it ideal for power management applications.
  • High-Speed Switching: With its fast switching capabilities, this MOSFET can operate at higher frequencies, which is crucial for applications such as switching regulators, converters, and motor drives.
  • Low Gate Threshold Voltage (V<sub>GS(th)): The low gate threshold voltage ensures that the transistor can be easily driven to conduction, allowing for use with low-voltage logic signals.
  • Advanced Packaging: The DMN2014LHAB-7 is offered in a compact SOT-23 package, which is suitable for space-constrained applications and helps in achieving a high-density PCB layout.
  • High Continuous Drain Current (I<sub>D): It supports a high continuous drain current, providing robust performance for a wide range of load conditions.
  • RoHS Compliant: The product adheres to the Restriction of Hazardous Substances (RoHS) directive, making it environmentally friendly and suitable for use in various international markets.

Applications

The DMN2014LHAB-7 is versatile and can be used in a variety of applications including:

  • Power Management Circuits
  • DC-DC Converters
  • Battery Management Systems
  • Load Switches
  • Motor Control Circuits
  • Portable Electronic Devices

With its impressive electrical characteristics and thermal performance, the DMN2014LHAB-7 from Diodes Incorporated is a reliable and efficient solution for designers looking to optimize power consumption and enhance the performance of their electronic systems. Its small footprint and compliance with environmental standards further ensure that it is a sustainable and space-saving choice for modern electronic designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
250+ $0.2029 $50.7250
605+ $0.1665 $100.7325
930+ $0.1613 $150.0090
1,285+ $0.1561 $200.5885
1,660+ $0.1509 $250.4940
2,220+ $0.1353 $300.3660
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,900 pieces
MOQ: 250 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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