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DMN2012UCA6-7

Part No DMN2012UCA6-7
Manufacturer Diodes Incorporated
Catalog FETs - Arrays
Description MOSFET BVDSS: 8V-24V X3-DSN2718-
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays
Mfr Diodes Incorporated
Package Tape & Reel
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual) Common Drain
Drain to Source Voltage (Vdss) 24V
Current - Continuous Drain (Id) @ 25°C 13A (Ta)
Rds On (Max) @ Id, Vgs 9mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id 1.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 26nC @ 4V
Input Capacitance (Ciss) (Max) @ Vds 2417pF @ 10V
Power - Max 820mW
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 6-SMD, No Lead
Supplier Device Package X3-DSN2718-6
Base Product Number DMN2012
Standard Package 3,000 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1114477-DMN2012UCA6-7
Ultra Librarian 3D Model Ultra Librarian DMN2012UCA6-7 CAD Model

Description

DMN2012UCA6-7 MOSFET by Diodes Incorporated

The DMN2012UCA6-7 is a high-performance, dual N-channel enhancement mode field effect transistor (MOSFET) designed by Diodes Incorporated. This product is particularly crafted for power management applications that demand a compact footprint, high efficiency, and reliable performance. The DMN2012UCA6-7 is an ideal choice for a variety of electronic circuits, including but not limited to, power supplies, DC-DC converters, and load switches.

Manufactured with a low on-resistance and a minimal gate charge, the DMN2012UCA6-7 is engineered to deliver high-speed switching performance. This translates to reduced conduction and switching losses, making the device highly efficient for power-sensitive designs. The MOSFET comes in a small 6-pin U-DFN2020 package, which not only saves valuable board space but also enhances thermal performance due to its power dissipation capabilities.

Key features of the DMN2012UCA6-7 include:

  • Low On-Resistance: The device offers a low R<sub>DS(on), which minimizes conduction losses and improves overall efficiency.
  • High-Speed Switching: Fast switching capabilities ensure that the MOSFET can handle high-frequency applications with ease.
  • Low Gate Charge: A reduced gate charge helps in achieving lower switching energies and faster turn-on and turn-off times.
  • High Continuous Drain Current: The DMN2012UCA6-7 supports a high continuous drain current, making it suitable for high-power applications.
  • Advanced Packaging: The U-DFN2020 package is not only space-efficient but also offers excellent thermal conductivity.

The DMN2012UCA6-7 also boasts robustness with its built-in electrostatic discharge (ESD) protection, ensuring the device's longevity and reliability against unexpected voltage spikes. Its dual configuration allows for flexibility in circuit design, providing designers with the option to use the MOSFETs in parallel for higher current applications or in separate paths for independent control.

With its combination of efficiency, compact size, and robust performance, the DMN2012UCA6-7 from Diodes Incorporated stands out as a superior choice for designers looking to optimize their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
70+ $0.8743 $61.2010
165+ $0.7175 $118.3875
250+ $0.6951 $173.7750
345+ $0.6727 $232.0815
445+ $0.6502 $289.3390
595+ $0.5830 $346.8850
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 18,000 pieces
MOQ: 70 pcs
Order Increment : 1 pcs
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