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DMG3402LQ-7

Part No DMG3402LQ-7
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 4A SOT23 / N-Channel 30 V 4A (Ta) 1.4W Surface Mount SOT-23-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Diodes Incorporated
Series Automotive, AEC-Q101
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
Rds On (Max) @ Id, Vgs 52mOhm @ 4A, 10V
Vgs(th) (Max) @ Id 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 11.7 nC @ 10 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 464 pF @ 15 V
Power Dissipation (Max) 1.4W
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3
Base Product Number DMG3402
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names DMG3402LQ-7DI-ND,31-DMG3402LQ-7DKR,31-DMG3402LQ-7TR,DMG3402LQ-7DI,31-DMG3402LQ-7CT
Standard Package 3,000
Win Source Part Number 1055746-DMG3402LQ-7
Ultra Librarian 3D Model Ultra Librarian DMG3402LQ-7 CAD Model

Description

DMG3402LQ-7 - Diodes Incorporated

The DMG3402LQ-7 is a high-performance, N-channel enhancement mode field effect transistor (MOSFET) designed and manufactured by Diodes Incorporated, a leading global provider of semiconductor products. This device is engineered to meet the demanding requirements of power management applications across a wide range of electronic devices and systems.

Key Features

  • Low On-Resistance: The DMG3402LQ-7 boasts an exceptionally low on-resistance (RDS(on)), which enhances its efficiency in conducting electricity and reduces power losses during operation.
  • High-Speed Switching: With its fast switching capabilities, this MOSFET is suitable for high-speed applications, ensuring minimal delay in response and increased performance in power switching circuits.
  • Low Gate Charge: The reduced gate charge (Qg) allows for lower switching losses and better control of the gate drive, making it ideal for high-frequency power converters.
  • Power Dissipation: The device can handle a continuous drain current (ID) with a maximum power dissipation, facilitating its use in high-power applications without compromising on performance.

Applications

The DMG3402LQ-7 is versatile and can be used in a variety of applications, including:

  • Power Management Systems
  • DC/DC Converters
  • Load Switches
  • Battery Management
  • Motor Drives

Product Specifications

The DMG3402LQ-7 comes in a compact, lead-free, RoHS-compliant package that is designed to minimize footprint and allow for high-density circuit designs. It operates over a broad temperature range, making it suitable for challenging environmental conditions. The MOSFET's reliability and durability are further ensured by its compliance with the rigorous standards set by Diodes Incorporated.

Ordering and Packaging

Available in a Green DFN2020-6 (Type B) package, the DMG3402LQ-7 is supplied in tape and reel format for easy integration into automated manufacturing processes. For ordering information, part numbers, and detailed specifications, customers should refer to the official Diodes Incorporated datasheets or contact their sales representatives.

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Pricing & Ordering

Quantity Unit Price Ext. Price
330+ $0.1520 $50.1600
805+ $0.1248 $100.4640
1,245+ $0.1209 $150.5205
1,710+ $0.1170 $200.0700
2,215+ $0.1131 $250.5165
2,960+ $0.1014 $300.1440
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,848 pieces
MOQ: 330 pcs
Order Increment : 1 pcs
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